Complementary metal oxide semiconductor integration of epitaxial Gd2O3

被引：18

作者：

Lemme, M. C. ^{[1
]}

Gottlob, H. D. B. ^{[1
]}

Echtermeyer, T. J. ^{[1
]}

Schmidt, M. ^{[1
]}

Kurz, H. ^{[1
]}

Endres, R. ^{[2
]}

Schwalke, U. ^{[2
]}

Czernohorkky, M. ^{[3
]}

Tetzlaff, D. ^{[3
]}

Osten, H. J. ^{[3
]}

机构：

[1] AMO GmbH, AMICA, D-52074 Aachen, Germany

[2] Tech Univ Darmstadt, Inst Semicond Technol & Nanoelect, D-64289 Darmstadt, Germany

[3] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30060 Hannover, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 01期

关键词：

K GATE DIELECTRICS;

D O I：

10.1116/1.3054350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, epitaxial gadolinium oxide (Gd2O3) is reviewed as a potential high-K gate dielectric, both "as deposited" by molecular beam epitaxy as well as after integration into complementary metal oxide semiconductor (CMOS) processes. The material shows promising intrinsic properties, meeting critical ITRS targets for leakage current densities even at subnanometer equivalent oxide thicknesses. These epitaxial oxides can be integrated into a CMOS platform by a "gentle" replacement gate process. While high temperature processing potentially degrades the material, a route toward thermally stable epitaxial Gd2O3 gate dielectrics is explored by carefully controlling the annealing conditions. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3054350]

引用

页码：258 / 261

页数：4

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