Tailoring the dielectric properties of KDP crystals by shock waves for microelectronic and optoelectronic applications

被引:28
|
作者
Sivakumar, A. [1 ]
Manivannan, M. [1 ]
Dhas, S. Sahaya Jude [2 ]
Sundar, J. Kalyana [3 ]
Jose, M. [1 ]
Dhas, S. A. Martin Britto [1 ]
机构
[1] Sacred Heart Coll, Dept Phys, Abraham Panampara Res Ctr, Tirupattur 635601, Tamil Nadu, India
[2] Bharath Inst Higher Educ & Res, Dept Phys, Chennai 600073, Tamil Nadu, India
[3] Periyar Univ, Dept Phys, Salem 636011, Tamil Nadu, India
来源
MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 08期
关键词
shock tube; Mach number; low dielectric constant; KDP crystal; microelectronic applications; FERROELECTRIC PROPERTIES; UNIAXIAL-STRESS; ADP;
D O I
10.1088/2053-1591/ab1c96
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present research article, authors report on tailoring the dielectric properties of potassium dihydrogen phosphate (KDP) crystals using supersonic shock waves that is proposed and demonstrated. The present experimentation involves an investigation of loading single pulse of shock waves with different Mach numbers such as 1.7, 1.9, 2.2, 2.4 and 2.5 on KDP crystals using shock tube. The crystalline nature and dielectric behavior of pre and post shock loaded KDP crystals are evaluated by PXRD and impedance analyzer techniques, respectively. Interestingly, shock wave loaded test materials show low dielectric constant compared to pre shock test crystal. Moreover, Mach 1.9 shock wave loaded test crystal shows the lowest dielectric constant compared to other Mach numbers and it is due to the reduction of lattice polarization and domain orientation changes. The experimental results clearly show that the test crystal can be a potential material for microelectronic and optoelectronic applications because it acquires low dielectric constant on shock exposure.
引用
收藏
页数:10
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