Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

被引：115
作者：
Hoang, Thang B. [1 ]
Moses, A. F. [1 ]
Zhou, H. L. [1 ]
Dheeraj, D. L. [1 ]
Fimland, B. O. [1 ]
Weman, H. [1 ]
机构：
[1] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7491 Trondheim, Norway
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 13期
关键词：
defect states; excitons; gallium arsenide; III-V semiconductors; impurity states; molecular beam epitaxial growth; nanowires; photoluminescence; transmission electron microscopy;
D O I：
10.1063/1.3104853
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Microphotoluminescence measurements are used to investigate the optical properties of single wurtzite GaAs nanowires grown by molecular beam epitaxy. The wurtzite GaAs nanowires exhibit a photoluminescence emission peak at 1.544 eV, 29 meV higher than the zinc blende GaAs free exciton energy. Temperature dependent photoluminescence measurements (4.4-70 K) show indications of defect and impurity related emissions at lower energies (1.53-1.54 eV) and the presence of nonradiative defects. High resolution transmission electron microscopy images show a low density of short zinc blende segments sandwiched in between a dominating wurtzite structure and weak photoluminescence emission related to such zinc blende segments is also observed.
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