GaN quantum dots by molecular beam epitaxy

被引：10

作者：

Daudin, B ^{[1
]}

Adelmann, C ^{[1
]}

Gogneau, N ^{[1
]}

Sarigiannidou, E ^{[1
]}

Monroy, E ^{[1
]}

Fossard, F ^{[1
]}

Rouvière, JL ^{[1
]}

机构：

[1] CEA, CNRS, UJF, Res Grp Nanophys & Semicond,Dept Rech Fondamental, F-38054 Grenoble 9, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期

关键词：

plasma-assisted MBE; GaN; quantum dots;

D O I：

10.1016/j.physe.2003.11.075

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The conditions to grow GaN quantum dots (QDs) by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow (SK) or of the Frank-Van der Merwe type. Accordingly, quantum wells or QDs can be grown, depending on the desired application. In the particular case of modified SK growth mode, it will be shown that both plastic and elastic strain relaxation can coexist. Growth of GaN QDs with N-polarity will also be discussed and compared to their counterpart with Ga polarity. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：540 / 545

页数：6

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