Influence of the growth conditions on the stoichiometry and on the optical properties of titanium oxide thin films prepared by reactive sputtering

被引：18

作者：

Perez-Pacheco, Argelia ^{[1
]}

Prieto, C. ^{[2
]}

Castaneda-Guzman, R. ^{[1
]}

Garcia-Lopez, J. ^{[3
]}

机构：

[1] Univ Nacl Autonoma Mexico, Lab Fotofis CCADET, Mexico City 04510, DF, Mexico

[2] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[3] Ctr Nacl Aceleradores, Seville 41092, Spain

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 18期

关键词：

Sputtering; Thin films; Titanium oxide; Rutherford back-scattering spectroscopy; Optical properties;

D O I：

10.1016/j.tsf.2009.01.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Titanium oxide thin films are deposited at room temperature by reactive DC sputtering onto glass and Si (100) substrates. Different conditions of deposition were varied such as sputtering power, deposition time and oxygen partial pressure to study their influence on the titanium oxide thin films growth. The absolute amount of oxygen and the relative O/Ti composition of films have been determined by Nuclear Reaction Analysis and Rutherford Backscattering Spectroscopy, respectively. Additionally, the band-gap was determined by measuring the optical absorption and its behavior correlated with the oxygen film content. From the present study, it is possible to establish that the optical band-gap energy depends mainly on the sputtering oxygen partial pressure used at the preparation and that films prepared with a partial oxygen pressure of 4 x 10(-2) Pa allows titanium oxide with near stoichiometric composition. Additionally, from the optical point of view, band-gap energies of 3.4 eV are obtained for near stoichiometric films and a decrease is observed for samples prepared with higher oxygen concentrations. (C) 2009 Elsevier B.V. All rights reserved

引用

页码：5415 / 5418

页数：4

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