Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown Sb2Te3- and Bi2Te3-Based Topological Insulators

被引：129

作者：

Olbrich, P. ^{[1
]}

Golub, L. E. ^{[2
]}

Herrmann, T. ^{[1
]}

Danilov, S. N. ^{[1
]}

Plank, H. ^{[1
]}

Bel'kov, V. V. ^{[2
]}

Mussler, G. ^{[3
]}

Weyrich, Ch. ^{[3
]}

Schneider, C. M. ^{[3
]}

Kampmeier, J. ^{[3
]}

Gruetzmacher, D. ^{[3
]}

Plucinski, L. ^{[3
]}

Eschbach, M. ^{[3
]}

Ganichev, S. D. ^{[1
]}

机构：

[1] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Julich Aachen Res Alliance JARA FIT, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2014年 / 113卷 / 09期

关键词：

SURFACE-STATE; GRAPHENE; BI2SE3; CONE;

D O I：

10.1103/PhysRevLett.113.096601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the observation of photogalvanic effects in epitaxially grown Sb2Te3 and Bi2Te3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac fermions driven back and forth by the terahertz electric field results in a dc electric current. Because of the "symmetry filtration" the dc current is generated by the surface electrons only and provides an optoelectronic access to probe the electron transport in TI, surface domains orientation, and details of electron scattering in 3D TI even at room temperature.

引用

页数：5

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