Solution-processed, high-performance n-channel organic microwire transistors

被引:209
作者
Oh, Joon Hak [1 ]
Lee, Hang Woo [1 ]
Mannsfeld, Stefan [1 ]
Stoltenberg, Randall M. [2 ]
Jung, Eric [1 ]
Jin, Yong Wan [3 ]
Kim, Jong Min [3 ]
Yoo, Ji-Beom [4 ]
Bao, Zhenan [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[3] Samsung Adv Inst Technol, Yongin 449712, Gyunggi Do, South Korea
[4] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
基金
美国国家科学基金会;
关键词
organic semiconductors; single crystals; solution processing; alignment; FIELD-EFFECT TRANSISTORS; LARGE-SCALE; CHARGE-TRANSPORT; HIGH-MOBILITY; SEMICONDUCTOR; NANOWIRES; ALIGNMENT; FABRICATION; INTEGRATION; DEVICES;
D O I
10.1073/pnas.0811923106
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The development of solution-processable, high-performance n-channel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks with controlled alignment and density lags far behind their inorganic counterparts. Here, we report a solution-processing approach to achieve high-performance air-stable n-channel organic transistors (the field-effect mobility (mu) up to 0.24 cm(2)/Vs for MW networks) comprising high mobility, solution-synthesized single-crystalline organic semiconducting MWs (mu as high as 1.4 cm(2)/Vs for individual MWs) and a filtration-and-transfer (FAT) alignment method. The FAT method enables facile control over both alignment and density of MWs. Our approach presents a route toward solution-processed, high-performance organic transistors and could be used for directed assembly of various functional organic and inorganic NWs/MWs.
引用
收藏
页码:6065 / 6070
页数:6
相关论文
共 50 条
  • [41] High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal-Organic Decomposition Method
    Xie, Yingtao
    Wang, Dongping
    Fong, Hon Hang
    JOURNAL OF NANOMATERIALS, 2018, 2018
  • [42] Phthalocyanine derivatives for solution-processed organic thin-film transistors
    Geng, Yanhou
    Dong, Shaoqiang
    Tian, Hongkun
    Yan, Donghang
    Wang, Fosong
    ORGANIC FIELD-EFFECT TRANSISTORS X, 2011, 8117
  • [43] Systematic Study of Widely Applicable N-Doping Strategy for High-Performance Solution-Processed Field-Effect Transistors
    Kim, Jihong
    Khim, Dongyoon
    Baeg, Kang-Jun
    Park, Won-Tae
    Lee, Seung-Hoon
    Kang, Minji
    Noh, Yong-Young
    Kim, Dong-Yu
    ADVANCED FUNCTIONAL MATERIALS, 2016, 26 (43) : 7886 - 7894
  • [44] Graphene as an electrode for solution-processed electron-transporting organic transistors
    Parui, Subir
    Ribeiro, Mario
    Atxabal, Ainhoa
    Llopis, Roger
    Casanova, Felix
    Hueso, Luis E.
    NANOSCALE, 2017, 9 (29) : 10178 - 10185
  • [45] High-performance n-channel thin-film transistors with acene-based semiconductors
    Zhang, Fapei
    Melzer, Christian
    Gassmann, Andrea
    von Seggern, Heinz
    Schwalm, Thorstan
    Gawrisch, Christian
    Rehahn, Matthias
    ORGANIC ELECTRONICS, 2013, 14 (03) : 888 - 896
  • [46] Laterally Expanded Rylene Diimides with Uniform Branched Side Chains for Solution-Processed Air Stable n-Channel Thin Film Transistors
    Xiao, Chengyi
    Jiang, Wei
    Li, Xiangguang
    Hao, Linxiao
    Liu, Chunming
    Wang, Zhaohui
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (20) : 18098 - 18103
  • [47] Low-Temperature Chemical Transformations for High-Performance Solution-Processed Oxide Transistors
    John, Rohit Abraham
    Chien, Nguyen Anh
    Shukla, Sudhanshu
    Tiwari, Naveen
    Shi, Chen
    Ing, Ng Geok
    Mathews, Nripan
    CHEMISTRY OF MATERIALS, 2016, 28 (22) : 8305 - 8313
  • [48] High-Performance n-Channel Printed Transistors on Biodegradable Substrate for Transient Electronics
    Dahiya, Abhishek Singh
    Zumeit, Ayoub
    Christou, Adamos
    Dahiya, Ravinder
    ADVANCED ELECTRONIC MATERIALS, 2022, 8 (09)
  • [49] Complete Suppression of Bias-Induced Threshold Voltage Shift below 273 K in Solution-Processed High-Performance Organic Transistors
    Kettner, Michel
    Zhou, Mi
    Brill, Jochen
    Blom, Paul W. M.
    Weitz, R. Thomas
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (41) : 35449 - 35454
  • [50] Polymer-Gated Transistors with Only One Solution-Processed, Single Crystalline Organic Microwire for Light and Oxygen Detection
    Lee, Junghyun
    Tarsoly, Gergely
    Shin, Taejoo
    Sim, Kyoseung
    Pyo, Seungmoon
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (21) : 25752 - 25761