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Solution-processed, high-performance n-channel organic microwire transistors
被引:209
作者:
Oh, Joon Hak
[1
]
Lee, Hang Woo
[1
]
Mannsfeld, Stefan
[1
]
Stoltenberg, Randall M.
[2
]
Jung, Eric
[1
]
Jin, Yong Wan
[3
]
Kim, Jong Min
[3
]
Yoo, Ji-Beom
[4
]
Bao, Zhenan
[1
]
机构:
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[3] Samsung Adv Inst Technol, Yongin 449712, Gyunggi Do, South Korea
[4] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
来源:
基金:
美国国家科学基金会;
关键词:
organic semiconductors;
single crystals;
solution processing;
alignment;
FIELD-EFFECT TRANSISTORS;
LARGE-SCALE;
CHARGE-TRANSPORT;
HIGH-MOBILITY;
SEMICONDUCTOR;
NANOWIRES;
ALIGNMENT;
FABRICATION;
INTEGRATION;
DEVICES;
D O I:
10.1073/pnas.0811923106
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
The development of solution-processable, high-performance n-channel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks with controlled alignment and density lags far behind their inorganic counterparts. Here, we report a solution-processing approach to achieve high-performance air-stable n-channel organic transistors (the field-effect mobility (mu) up to 0.24 cm(2)/Vs for MW networks) comprising high mobility, solution-synthesized single-crystalline organic semiconducting MWs (mu as high as 1.4 cm(2)/Vs for individual MWs) and a filtration-and-transfer (FAT) alignment method. The FAT method enables facile control over both alignment and density of MWs. Our approach presents a route toward solution-processed, high-performance organic transistors and could be used for directed assembly of various functional organic and inorganic NWs/MWs.
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页码:6065 / 6070
页数:6
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