Solution-processed, high-performance n-channel organic microwire transistors

被引:209
|
作者
Oh, Joon Hak [1 ]
Lee, Hang Woo [1 ]
Mannsfeld, Stefan [1 ]
Stoltenberg, Randall M. [2 ]
Jung, Eric [1 ]
Jin, Yong Wan [3 ]
Kim, Jong Min [3 ]
Yoo, Ji-Beom [4 ]
Bao, Zhenan [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[3] Samsung Adv Inst Technol, Yongin 449712, Gyunggi Do, South Korea
[4] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
基金
美国国家科学基金会;
关键词
organic semiconductors; single crystals; solution processing; alignment; FIELD-EFFECT TRANSISTORS; LARGE-SCALE; CHARGE-TRANSPORT; HIGH-MOBILITY; SEMICONDUCTOR; NANOWIRES; ALIGNMENT; FABRICATION; INTEGRATION; DEVICES;
D O I
10.1073/pnas.0811923106
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The development of solution-processable, high-performance n-channel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks with controlled alignment and density lags far behind their inorganic counterparts. Here, we report a solution-processing approach to achieve high-performance air-stable n-channel organic transistors (the field-effect mobility (mu) up to 0.24 cm(2)/Vs for MW networks) comprising high mobility, solution-synthesized single-crystalline organic semiconducting MWs (mu as high as 1.4 cm(2)/Vs for individual MWs) and a filtration-and-transfer (FAT) alignment method. The FAT method enables facile control over both alignment and density of MWs. Our approach presents a route toward solution-processed, high-performance organic transistors and could be used for directed assembly of various functional organic and inorganic NWs/MWs.
引用
收藏
页码:6065 / 6070
页数:6
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