Mechanical properties of individual InAs nanowires studied by tensile tests

被引：29

作者：

Li, X. ^{[1
,2
]}

Wei, X. L. ^{[1
,2
]}

Xu, T. T. ^{[1
,2
]}

Ning, Z. Y. ^{[1
,2
]}

Shu, J. P. ^{[1
,2
]}

Wang, X. Y. ^{[3
]}

Pan, D. ^{[3
]}

Zhao, J. H. ^{[3
]}

Yang, T. ^{[3
]}

Chen, Q. ^{[1
,2
]}

机构：

[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 10期

基金：

高等学校博士学科点专项科研基金;

关键词：

FIELD-EFFECT TRANSISTORS; WURTZITE;

D O I：

10.1063/1.4868133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mechanical properties of individual InAs nanowires (NWs) synthesized by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) methods are studied by in-situ tensile tests in a scanning electron microscope and their fracture strength and Young's modulus are obtained. The two types of NWs both exhibit brittle fracture with a maximum elastic strain up to similar to 10%. Their fracture strength distributes in a similar range of similar to 2-5GPa with a general trend of increasing with NW volume decrease, which is well described by Weibull statistic with a smaller Weibull modulus and a higher characteristic strength for MOCVD NWs. Young's modulus is determined to be 16-78GPa with an average value of 45 GPa and no dependence on NW diameter for MOCVD NWs and 34-79GPa with an average value of 58GPa for MBE NWs. (C) 2014 AIP Publishing LLC.

引用

页数：4

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