In Operando Angle-Resolved Photoemission Spectroscopy with Nanoscale Spatial Resolution: Spatial Mapping of the Electronic Structure of Twisted Bilayer Graphene

被引:9
|
作者
Majchrzak, Paulina [1 ]
Muzzio, Ryan [2 ]
Jones, Alfred J. H. [1 ]
Curcio, Davide [1 ]
Volckaert, Klara [1 ]
Biswas, Deepnarayan [1 ]
Gobbo, Jacob [2 ]
Singh, Simranjeet [2 ]
Robinson, Jeremy T. [3 ]
Watanabe, Kenji [4 ]
Taniguchi, Takashi [5 ]
Kim, Timur K. [6 ]
Cacho, Cephise [6 ]
Miwa, Jill A. [1 ]
Hofmann, Philip [1 ]
Katoch, Jyoti [2 ]
Ulstrup, Soren [1 ]
机构
[1] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark
[2] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[3] US Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA
[4] Natl Inst Mat Sci, Funct Mat Res Ctr, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[5] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[6] Diamond Light Source, Div Sci, Didcot, Oxon, England
来源
SMALL SCIENCE | 2021年 / 1卷 / 06期
关键词
2D material devices; angle-resolved photoemission spectroscopy with nanoscale spatial resolution; electron transport; twisted bilayer graphene; van der Waals heterostructures;
D O I
10.1002/smsc.202000075
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
To pinpoint the electronic and structural mechanisms that affect intrinsic and extrinsic performance limits of 2D material devices, it is of critical importance to resolve the electronic properties on the mesoscopic length scale of such devices under operating conditions. Herein, angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) is used to map the quasiparticle electronic structure of a twisted bilayer graphene device. The dispersion and linewidth of the Dirac cones associated with top and bottom graphene layers are determined as a function of spatial position on the device under both static and operating conditions. The analysis reveals that microscopic rotational domains in the two graphene layers establish a range of twist angles from 9.8 degrees to 12.7 degrees. Application of current and electrostatic gating lead to strong electric fields with peak strengths of 0.75 V/mu m at the rotational domain boundaries in the device. These proof-of-principle results demonstrate the potential of nanoARPES to link mesoscale structural variations with electronic states in operating device conditions and to disentangle such extrinsic factors from the intrinsic quasiparticle dispersion.
引用
收藏
页数:11
相关论文
共 50 条
  • [21] Electronic structure of ferromagnetic semiconductor CrGeTe3 by angle-resolved photoemission spectroscopy
    Li, Y. F.
    Wang, W.
    Guo, W.
    Gu, C. Y.
    Sun, H. Y.
    He, L.
    Zhou, J.
    Gu, Z. B.
    Nie, Y. F.
    Pan, X. Q.
    PHYSICAL REVIEW B, 2018, 98 (12)
  • [22] Electronic band structure of AlB2 studied by angle-resolved photoemission spectroscopy
    Souma, S
    Sato, T
    Takahashi, T
    Kimura, N
    Aoki, H
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2005, 144 : 545 - 547
  • [23] Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy
    Okabayashi, J
    Kimura, A
    Rader, O
    Mizokawa, T
    Fujimori, A
    Hayashi, T
    Tanaka, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 10 (1-3): : 192 - 195
  • [24] Surface-driven electronic structure in LaFeAsO studied by angle-resolved photoemission spectroscopy
    Liu, Chang
    Lee, Yongbin
    Palczewski, A. D.
    Yan, J-Q.
    Kondo, Takeshi
    Harmon, B. N.
    McCallum, R. W.
    Lograsso, T. A.
    Kaminski, A.
    PHYSICAL REVIEW B, 2010, 82 (07):
  • [25] Electronic structure of Cr2AlC as observed by angle-resolved photoemission spectroscopy
    Ito, Takahiro
    Pinek, Damir
    Fujita, Taishi
    Nakatake, Masashi
    Ideta, Shin-ichiro
    Tanaka, Kiyohisa
    Ouisse, Thierry
    PHYSICAL REVIEW B, 2017, 96 (19)
  • [26] Electronic structure of the YH3 phase from angle-resolved photoemission spectroscopy
    Hayoz, J.
    Koitzsch, C.
    Naumovicá, D.
    Schlapbach, L.
    Aebi, P.
    Physical Review Letters, 2003, 90 (19) : 1 - 196804
  • [27] Electronic structure studies of BaFe2As2 by angle-resolved photoemission spectroscopy
    Fink, J.
    Thirupathaiah, S.
    Ovsyannikov, R.
    Duerr, H. A.
    Follath, R.
    Huang, Y.
    de Jong, S.
    Golden, M. S.
    Zhang, Yu-Zhong
    Jeschke, H. O.
    Valenti, R.
    Felser, C.
    Farahani, S. Dastjani
    Rotter, M.
    Johrendt, D.
    PHYSICAL REVIEW B, 2009, 79 (15):
  • [28] ANGLE-RESOLVED PHOTOEMISSION AND THE ELECTRONIC-STRUCTURE OF PD(111)
    HORA, R
    SCHEFFLER, M
    PHYSICAL REVIEW B, 1984, 29 (02): : 692 - 702
  • [29] The electronic structure of the highTc superconductors obtained by angle-resolved photoemission
    Campuzano, JC
    Randeria, M
    Norman, M
    Ding, H
    GAP SYMMETRY AND FLUCTUATIONS IN HIGH-T(C) SUPERCONDUCTORS, 1998, 371 : 229 - 247
  • [30] Electronic structure of sodium tungsten bronzes NaxWO3 by high-resolution angle-resolved photoemission spectroscopy
    Raj, S.
    Matsui, H.
    Souma, S.
    Sato, T.
    Takahashi, T.
    Chakraborty, A.
    Sarma, D. D.
    Mahadevan, P.
    Oishi, S.
    McCarroll, W. H.
    Greenblatt, M.
    PHYSICAL REVIEW B, 2007, 75 (15):