A facile route to arsenic-doped p-type ZnO films

被引：17
|
作者：
Wang, S. P. [1 ,2 ]
Shan, C. X. [1 ]
Li, B. H. [1 ]
Zhang, J. Y. [1 ]
Yao, B. [1 ]
Shen, D. Z. [1 ]
Fan, X. W. [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 14期
关键词：
Diffusion; Doping; Molecular beam epitaxy; Semiconducting II-VI materials; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; THIN-FILMS; SUBSTRATE; NO;
D O I：
10.1016/j.jcrysgro.2009.06.002
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Undoped zinc oxide (ZnO) films have been prepared on sapphire substrates in a molecular beam epitaxy technique, and the films were annealed in air ambient along with a GaAs wafer. Arsenic in the GaAs wafer will evaporate, and enter into the ZnO films. In this facile way, arsenic-doped p-ZnO has been obtained. Hall measurements reveal that the hole concentration and Hall mobility of the ZnO:As films obtained in this way can reach 3.7 x 10(17) cm(-3) and 2.8 cm(2) V-1 S-1, respectively. X-ray photoelectron spectroscopy confirms the incorporation of arsenic into the ZnO films. The activation energy of the acceptors derived from temperature-dependent Hall measurement is about 164 meV. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：3577 / 3580
页数：4
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