Low Dark Count Single-Photon Avalanche Diode Structure Compatible With Standard Nanometer Scale CMOS Technology

被引：163

作者：

Richardson, Justin A. ^{[1
,2
]}

Grant, Lindsay A. ^{[1
]}

Henderson, Robert K. ^{[2
]}

机构：

[1] ST Microelect Imaging Div, Edinburgh EH12 7BF, Midlothian, Scotland

[2] Univ Edinburgh, Sch Elect & Elect Engn, Inst Integrated Micro & Nano Syst, Edinburgh EH9 3JL, Midlothian, Scotland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 14期

关键词：

Biomedical imaging; complementary metal-oxide-semiconductor (CMOS) integrated circuits; image sensors; photodetectors; photodiodes; p-n junctions; DETECTOR;

D O I：

10.1109/LPT.2009.2022059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-photon avalanche diode structure implemented in a 130-nm imaging process is reported. The device employs a p-well anode, rather than the commonly adopted p+, and a novel guard ring compatible with recent scaling trends in standard nanometer scale complementary metal-oxide-semiconductor technologies. The 50-mu m(2) active area device exhibits a dark count rate of 25 Hz at 20 degrees C and a photon detection efficiency peak of 28% at 500 nm.

引用

页码：1020 / 1022

页数：3

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