Electrically driven spin qubit based on valley mixing

被引:34
作者
Huang, Wister [1 ]
Veldhorst, Menno [1 ,2 ]
Zimmerman, Neil M. [3 ]
Dzurak, Andrew S. [1 ]
Culcer, Dimitrie [4 ]
机构
[1] Univ New South Wales, Sch Elect Engn & Telecommun, Ctr Quantum Computat & Commun Technol, Sydney, NSW 2052, Australia
[2] Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands
[3] NIST, Gaithersburg, MD 20899 USA
[4] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会;
关键词
SINGLE-ELECTRON SPIN; QUANTUM-DOT; SILICON; ROUGHNESS; GATE;
D O I
10.1103/PhysRevB.95.075403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times t(pi) of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.
引用
收藏
页数:8
相关论文
共 46 条
[1]   DETERMINATION OF SI/SIO2 INTERFACIAL ROUGHNESS USING WEAK-LOCALIZATION [J].
ANDERSON, WR ;
LOMBARDI, DR ;
MITEV, PH ;
MA, TP ;
WHEELER, RG .
MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) :43-46
[2]   Fast and Robust Spin Manipulation in a Quantum Dot by Electric Fields [J].
Ban, Yue ;
Chen, Xi ;
Ya Sherman, E. ;
Muga, J. G. .
PHYSICAL REVIEW LETTERS, 2012, 109 (20)
[3]   Microscopic models for charge-noise-induced dephasing of solid-state qubits [J].
Beaudoin, Felix ;
Coish, W. A. .
PHYSICAL REVIEW B, 2015, 91 (16)
[4]   Charge noise, spin-orbit coupling, and dephasing of single-spin qubits [J].
Bermeister, Adam ;
Keith, Daniel ;
Culcer, Dimitrie .
APPLIED PHYSICS LETTERS, 2014, 105 (19)
[5]   Dephasing time of GaAs electron-spin qubits coupled to a nuclear bath exceeding 200 μs [J].
Bluhm, Hendrik ;
Foletti, Sandra ;
Neder, Izhar ;
Rudner, Mark ;
Mahalu, Diana ;
Umansky, Vladimir ;
Yacoby, Amir .
NATURE PHYSICS, 2011, 7 (02) :109-113
[6]   Control of valley dynamics in silicon quantum dots in the presence of an interface step [J].
Boross, Peter ;
Szechenyi, Gabor ;
Culcer, Dimitrie ;
Palyi, Andras .
PHYSICAL REVIEW B, 2016, 94 (03)
[7]   Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling [J].
Bulaev, DV ;
Loss, D .
PHYSICAL REVIEW B, 2005, 71 (20)
[8]   Electrical generation of spin in crystals with reduced symmetry [J].
Culcer, D ;
Yao, Y ;
MacDonald, AH ;
Niu, Q .
PHYSICAL REVIEW B, 2005, 72 (04)
[9]   Steady states of spin distributions in the presence of spin-orbit interactions [J].
Culcer, Dimitrie ;
Winkler, R. .
PHYSICAL REVIEW B, 2007, 76 (24)
[10]   Spin polarization decay in spin-1/2 and spin-3/2 systems [J].
Culcer, Dimitrie ;
Winkler, R. .
PHYSICAL REVIEW B, 2007, 76 (19)