Density functional theory calculations of point defects and hydrogen isotopes in Li4SiO4

被引:20
作者
Xiang, Xiaogang [1 ,2 ]
Zhu, Wenjun [2 ]
Lu, Tiecheng [1 ]
Gao, Tao [3 ]
Shi, Yanli [1 ]
Yang, Mao [1 ]
Gong, Yichao [1 ]
Yu, Xiaohe [1 ]
Feng, Lan [3 ]
Wei, Yongkai [1 ,2 ]
Lu, Zhipeng [4 ]
机构
[1] Sichuan Univ, Coll Phys Sci & Technol, Key Lab High Energy Dens Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
[2] China Acad Engn Phys, Inst Fluid Phys, Natl Key Lab Shock Wave & Detonat Phys, Mianyang 621900, Peoples R China
[3] Sichuan Univ, Inst Atom & Mol Phys, Coll Phys Sci & Technol, Chengdu 610065, Peoples R China
[4] Chinese Peoples Armed Police Force, Dept Math & Phys, Officer Coll, Chengdu 610213, Peoples R China
关键词
CERAMIC BREEDER MATERIALS; TRITIUM RELEASE BEHAVIOR; PURGE GAS CONDITIONS; AB-INITIO; LITHIUM-OXIDE; 1ST-PRINCIPLES CALCULATIONS; ELECTRONIC-STRUCTURES; OCCUPATION SITES; CHEMICAL FORM; LI2TIO3;
D O I
10.1063/1.4934935
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The Li4SiO4 is a promising breeder material for future fusion reactors. Radiation induced vacancies and hydrogen isotope related impurities are the major types of point defects in this breeder material. In present study, various kinds of vacancies and hydrogen isotopes related point defects in Li4SiO4 are investigated through density functional theory (DFT) calculations. The band gap of Li4SiO4 is determined by UV-Vis diffuse reflectance spectroscopy experiments. Formation energies of all possible charge states of Li, Si and O vacancies are calculated using DFT methods. Formation energies of possible charge states of hydrogen isotopes substitution for Li and O are also calculated. We found that Li-vacancies will dominate among all vacancies in neutral charge state under radiation conditions and the O, Li, and Si vacancies (V-O, V-Li, V-Si) are stable in charge states +2, -1, -4 for most of the range of Fermi level, respectively. The interstitial hydrogen isotopes (H-i) and substitutional H-Li are stable in the charge states +1, 0 for most of the range of Fermi level, respectively. Moreover, substitutional H-O are stable in +1 charge states. We also investigated the process of tritium recovery by discussing the interaction between interstitial H and Li-vacancy, O-vacancy, and found that H-O(+) and H-Li(0) are the most common H related defects during radiation process. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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页数:15
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