Beryllium-doped single-crystal diamond grown by microwave plasma CVD

被引：5

作者：

Ueda, K. ^{[1
]}

Kasu, M. ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

关键词：

Diamond; CVD; Doping; Beryllium; Cathodoluminescence; HIGH-PRESSURE; FILMS; GHZ;

D O I：

10.1016/j.diamond.2008.10.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We performed beryllium (Be) doping to diamond by inserting a solid Be-rod into the plasma ball during microwave plasma CVD growth. The Be concentration can be controlled in the range from similar to 10(16) to similar to 10(18) cm(-3) by changing the Be-rod insertion depth in the plasma ball and the microwave power. In cathodoluminescence (CL) spectra of Be-doped CVD films, we observed a peak at 4.760 eV and its phonon replica as well as free-exciton (FE)related emissions. Peak energies of these emissions are close to those of Be-related emissions from Be-implanted diamond films. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：121 / 123

页数：3

共 12 条

[1] ELECTRICAL CHARACTERIZATION OF HOMOEPITAXIAL DIAMOND FILMS DOPED WITH B, P, LI AND NA DURING CRYSTAL-GROWTH [J].