Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates

被引：20

作者：

Ryu, SW ^{[1
]}

Dapkus, PD ^{[1
]}

机构：

[1] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 12期

关键词：

D O I：

10.1049/el:20020410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAsSb/InGaAs type-II quantum well laser diode on GaAs substrates was demonstrated for the first time. Threshold current density of 6 10 A/cm(2) was obtained from a 1.1 mm-long broad area laser with the emission wavelength of 1.2 mum.

引用

页码：564 / 565

页数：2

共 4 条

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