Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth

被引：13
作者：
Jursènas, S
Kuokstis, E
Miasojedovas, S
Kurilcik, G
Zukauskas, A
Chen, CQ
Yang, JW
Adivarahan, V
Khan, MA
机构：
[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2054 Vilnius, Lithuania
[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 05期
关键词：
D O I：
10.1063/1.1777409
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carrier recombination dynamics in epitaxial a-plane GaN and fully coalesced epitaxial laterally overgrown (ELOG) a-plane GaN films has been studied by means of time-resolved photoluminescence under high photoexcitation. The results were compared with conventional c-plane GaN films grown under similar conditions. In a-plane GaN epilayers, the total efficiency of electron-hole plasma spontaneous luminescence decreases 20 times, whereas the luminescence decay time reduces from tau(LU)=42 to tau(LU)less than or equal to10 ps in comparison with c-plane GaN films. Meanwhile, an essential increase in total emission efficiency (by more than two orders of magnitude) and an increase of the decay time up to tau(LU)=430 ps have been observed for an ELOG a-plane sample in comparison with a-plane GaN films. This confirms a significant reduction of the nonradiative recombination rate for nonequilibrium carriers. Assuming a saturation of the nonradiative deep-level transitions, the room-temperature free-carrier lifetime of tau=910 ps for ELOG a-plane GaN sample was obtained, which indicates on an excellent quality of the a-plane ELOG GaN films. (C) 2004 American Institute of Physics.
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页码：771 / 773
页数：3
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