Porous silicon: From luminescence to LEDs

被引：295

作者：

Collins, RT

Fauchet, PM

Tischler, MA

机构：

[1] UNIV ROCHESTER,LASER ENERGET LAB,ROCHESTER,NY

[2] EPITRONIC INC,PHOENIX,AZ

来源：

PHYSICS TODAY | 1997年 / 50卷 / 01期

关键词：

D O I：

10.1063/1.881650

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

With its tunable light emission, room-temperature quantum efficiencies near 10% and increasingly efficient light-emitting diodes, porous silicon may hold the promise of fully integrated optoelectronic devices.

引用

页码：24 / 31

页数：8

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