Porous silicon: From luminescence to LEDs

被引：295
作者：
Collins, RT
Fauchet, PM
Tischler, MA
机构：
[1] UNIV ROCHESTER,LASER ENERGET LAB,ROCHESTER,NY
[2] EPITRONIC INC,PHOENIX,AZ
来源：
PHYSICS TODAY | 1997年 / 50卷 / 01期
关键词：
D O I：
10.1063/1.881650
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
With its tunable light emission, room-temperature quantum efficiencies near 10% and increasingly efficient light-emitting diodes, porous silicon may hold the promise of fully integrated optoelectronic devices.
引用
收藏
页码：24 / 31
页数：8
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