A Fully Integrated-32-dB EVM Broadband 802.11abgn/ac PA With an Fixternal PA Driver in WLP 40-nm CMOS

Even though CMOS-based power amplifiers (PAs) provide reductions in size and cost for wireless local area network (WEAN) applications, their performances must be improved to match those of HBT-based PAs. In this paper, a design methodology for WLAN CMOS PAs is proposed to obtain broadband performances with a compact area using the wafer-level package technology. To achieve a highly linear output power with high efficiency across a 1-GHz bandwidth in a 5G-band PA, a reconfigurable interstage matching network and a broadband compact output transformer are proposed. For applications requiring a high linear transmission power, an integrated CMOS PA in a full transmitter chain must support the operation with external HBT-based PAs. A structure involving a main internal PA with an external PA driver is proposed to support the external PA mode with low-current consumption. The proposed structure does not require additional components or an output port and does not have the performance degradation of the main internal PA. The implemented 2.4G-band/5G-band CMOS PA using 40-nm CMOS technology has an average output power in the ranges of 19.1-19.2/18.6-18.8 dBm in the respective ranges of 2.4-2.5/4.9-5.9 GHz and concurrently complies with the -32-dB error vector magnitude (EVM) requirement. The power-added efficiencies (PAEs) for the 2.4G-band/5G-band CMOS PA with a -32-dB EVM is 12.9%/12.2% at 2.45/5.5 GHz. To the best of the authors' knowledge, the presented PA exhibits the state-of-the-art minimum variation with high PAE and an output power in the range of 4.9-5.9 GHz compared to the fully integrated WiFi CMOS PAs reported thus far.