Generic Electrostatic Discharges Protection Solutions for RF and Millimeter-Wave Applications

被引：8

作者：

Lim, Tekfouy ^{[1
,2
]}

Benech, Philippe ^{[2
]}

Jimenez, Jean ^{[1
]}

Fournier, Jean-Michel ^{[2
]}

Heitz, Boris ^{[1
]}

Bourgeat, Johan ^{[1
]}

Galy, Philippe ^{[1
]}

机构：

[1] STMicroelect Crolles, F-38016 Crolles, France

[2] IMEP LAHC Lab, F-38016 Grenoble, France

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2015年 / 63卷 / 11期

关键词：

Advanced CMOS technologies; electrostatic discharges (ESDs); millimeter-wave (mm-wave); RF; transmission lines; TRANSMISSION-LINE; ESD; DESIGN; CAPACITANCE; ROBUSTNESS; AMPLIFIER; CIRCUITS;

D O I：

10.1109/TMTT.2015.2478000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The vertical shrinkage of the advanced CMOS processes thicknesses makes electrostatic discharge (ESD) issues become more significant. RF and millimeter-wave (mm-wave) circuits are very sensitive to the ESD components' capacitive parasitic effect. Surface area is a key factor as well in an ESD protection circuit for mm-wave applications. This paper presents silicon-verified ESD solutions, which fulfill physical dimensions, ESD robustness, and broadband frequencies requirements.

引用

页码：3747 / 3759

页数：13

共 36 条

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