Thermally affected parameters of the current-voltage characteristics of silicon photocell

被引：162

作者：

Radziemska, E

Klugmann, E

机构：

[1] Gdansk Tech Univ, Dept Apparatus & Tech Machinery, PL-80952 Gdansk, Poland

[2] Gdansk Tech Univ, Dept Solid State Elect, PL-80952 Gdansk, Poland

来源：

ENERGY CONVERSION AND MANAGEMENT | 2002年 / 43卷 / 14期

关键词：

photodiode; photovoltaic; silicon solar cell; temperature coefficients;

D O I：

10.1016/S0196-8904(01)00132-7

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The influence of temperature on the parameters of silicon photocells is presented. For comparison, the results of monocrystalline solar cells and photodiodes with a large light sensitive area are used. The temperature increase of the cell surfaces within the range from 22degreesC to 70degreesC as a function of illumination time has been observed. It is shown that the product IscUoc degrades about 0.8% per 1 K temperature increase. In the paper, a small increase of the short circuit current, a significant reduction of the open circuit voltage and the electric power from the photovoltaic cells has been shown. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1889 / 1900

页数：12

共 16 条

[1]

Animalu A.O. E., 1977, Intermediate Quantum Theory of Crystalline Solids

[2]

[Anonymous], LOW COST POWER THIN

[3]

EINHAUS R, 2000, P 16 EUR PHOT SOL EN, P1226

[4] SILICON PHOTO-VOLTAIC CELLS [J].