Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10- nanosheet seed layer

被引：8

作者：

Kimura, Junichi ^{[1
]}

Takuwa, Itaru ^{[1
]}

Matsushima, Masaaki ^{[1
]}

Shimizu, Takao ^{[2
]}

Uchida, Hiroshi ^{[3
]}

Kiguchi, Takanori ^{[4
]}

Shiraishi, Takahisa ^{[4
]}

Konno, Toyohiko J. ^{[4
]}

Shibata, Tatsuo ^{[5
]}

Osada, Minoru ^{[5
]}

Sasaki, Takayoshi ^{[5
]}

Funakubo, Hiroshi ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268503, Japan

[3] Sophia Univ, Dept Mat & Life Sci, Chiyoda Ku, Tokyo 1028554, Japan

[4] Tohoku Univ, Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[5] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

关键词：

TEMPERATURE; LATTICES; OXIDES; SRRUO3;

D O I：

10.1038/srep20713

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4Ti4O15 films with various film thicknesses were prepared on (100)(c)SrRuO3/Ca2Nb3O10- nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (epsilon(r)) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that epsilon(r) of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 mu F/cm(2) for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 degrees C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10- nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

引用

页数：9

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