Research on magnetorheological finishing of aspheric optics for single-crystal silicon

被引:0
作者
Zhang, Yunfei [1 ,2 ]
Fang, Fengzhou [2 ,3 ]
Fan, Wei [1 ]
Huang, Wen [1 ]
Wang, Chao [1 ]
Ma, Shasha [4 ]
He, Jianhong [5 ]
机构
[1] China Acad Engn Phys, Inst Machinery Mfg Technol, Mianyang 621900, Sichuan, Peoples R China
[2] Tianjin Univ, Ctr Micronano Mfg Technol MNMT, State Key Lab Precis Measuring Technol & Instrume, Tianjin 300072, Peoples R China
[3] Univ Coll Dublin, Sch Mech & Mat Engn, MNMT Dublin, Dublin, Ireland
[4] PetroChina Qinghai Oilfield Co, Drilling & Prod Technol Res Inst, Dunhuang 736202, Gansu, Peoples R China
[5] Fourth Oil Producing Plant Petrochina Qinghai Oil, Mangya 816400, Qinghai, Peoples R China
来源
SECOND SYMPOSIUM ON NOVEL TECHNOLOGY OF X-RAY IMAGING | 2019年 / 11068卷
基金
中国国家自然科学基金;
关键词
single-crystal silicon; magnetorheological finishing; aspheric optics;
D O I
10.1117/12.2525161
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-crystal silicon is a typical infrared optical material, commonly machined by single-point diamond turning (SPDT) with micro-level figure accuracy and nano-level roughness. However, the tool marks, surface damage and middle-frequency error left by the diamond turning process may greatly affect the imaging quality. Magnetorheological finishing (MRF) is a deterministic, sub-aperture polishing technology that is very helpful in improving both surface nano-roughness and surface figure and can be used to polish silicon materials. Although the feasibility of MRF for single-crystal silicon has been proved, there are still some problems such as low material removal rate and uncontrollable surface integrity. In this study, the MRF mechanism for single-crystal silicon was explored, and the preparation method of MR fluid was optimised. An experiment was performed to machine a large-aperture single-crystal silicon aspheric surface on an MRF machine developed by China Academy of Engineering Physics. After polishing for several times, the figure accuracy PV improved from 5.9 mu m to 0.56 mu m, and roughness Rq reduced to 1.2 nm, verifying the excellent performance of MRF in infrared material processing.
引用
收藏
页数:5
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