Collision cascades enhanced hydrogen redistribution in cobalt implanted hydrogenated diamond-like carbon films

被引:8
作者
Gupta, P. [1 ,2 ]
Becker, H. -W. [3 ]
Williams, G. V. M. [2 ]
Huebner, R. [4 ]
Heinig, K. -H. [4 ]
Markwitz, A. [1 ,2 ]
机构
[1] GNS Sci, Natl Isotope Ctr, Lower Hutt, New Zealand
[2] Victoria Univ Wellington, MacDiarmid Inst Adv Mat & Nanotechnol, Sch Chem & Phys Sci, Wellington, New Zealand
[3] Ruhr Univ Bochum, RUBION, Bochum, Germany
[4] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Dresden, Germany
关键词
Hydrogenated diamond-like carbon; Cobalt implantation; Room temperature; Hydrogen redistribution; Bimodal metal ion distribution; Collision cascades; ION; TEMPERATURE; SIMULATION; COATINGS;
D O I
10.1016/j.nimb.2016.12.029
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Hydrogenated diamond-like carbon films produced by C3H6 deposition at 5 kV and implanted at room temperature with 30 keV Co atoms to 12 at.% show not only a bimodal distribution of Co atoms but also a massive redistribution of hydrogen in the films. Resonant nuclear reaction analysis was used to measure the hydrogen depth profiles (15N-method). Depletion of hydrogen near the surface was measured to be as low as 7 at.% followed by hydrogen accumulation from 27 to 35 at.%. A model is proposed considering the thermal energy deposited by collision cascade for thermal insulators. In this model, sufficient energy is provided for dissociated hydrogen to diffuse out of the sample from the surface and diffuse into the sample towards the interface which is however limited by the range of the incoming Co ions. At a hydrogen concentration of 35 at.%, the concentration gradient of the mobile unbounded hydrogen atoms is neutralised effectively stopping diffusion towards the interface. The results point towards new routes of controlling the composition and distribution of elements at the nanoscale within a base matrix without using any heat treatment methods. Exploring these opportunities can lead to a new horizon of materials and device engineering needed for enabling advanced technologies and applications. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:6 / 11
页数:6
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