Fabrication of a strain-induced high performance NbN ultrathin film by a Nb5N6 buffer layer on Si substrate

被引：33

作者：

Jia, X. Q. ^{[1
]}

Kang, L. ^{[1
]}

Gu, M. ^{[1
]}

Yang, X. Z. ^{[1
]}

Chen, C. ^{[1
]}

Tu, X. C. ^{[1
]}

Jin, B. B. ^{[1
]}

Xu, W. W. ^{[1
]}

Chen, J. ^{[1
]}

Wu, P. H. ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, RISE, Nanjing 210093, Jiangsu, Peoples R China

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2014年 / 27卷 / 03期

基金：

中国国家自然科学基金;

关键词：

NbN; ultrathin film; buffer layer; strain-induced; Si; SUPERCONDUCTING PROPERTIES; NIOBIUM NITRIDE; THIN-FILMS; SILICON; GROWTH;

D O I：

10.1088/0953-2048/27/3/035010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice mismatch between NbN and silicon (Si) reduces the superconducting properties of NbN film on Si substrate, and this in turn affects the performance of devices such as the hot electron bolometer (HEB) and superconducting nanowire single photon detector (SNSPD). We have found that the superconducting properties of NbN film on Si will be significantly improved by a Nb5N6 buffer layer. The strain of the NbN film was optimized by varying the thickness of the buffer layer. With 30 nm thick Nb5N6, the zero resistance superconducting transition temperature. (T-C0) of a 6 nm thick NbN film on Si is up to 13.5 K and the critical current density. (JC) of the film is more than 107 A cm(-2). All the details of preparation, improvement and characteristics of this film are also presented.

引用

页数：6

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