Efficiency Improvement of Grid Inverters With Hybrid Devices

被引：24

作者：

Wang, Ye ^{[1
]}

Chen, Min ^{[1
]}

Yan, Cheng ^{[1
]}

Xu, Dehong ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Inst Power Elect, Hangzhou 310027, Zhejiang, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2019年 / 34卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Grid inverter; high efficiency; hybrid switch; switching patterns; SPACE-VECTOR; SIC DEVICES; MOSFET; POWER; IGBT; MODULATION; CONDUCTION; FREQUENCY; BENEFITS;

D O I：

10.1109/TPEL.2018.2881115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a hybrid switch with the combination of large-current silicon (Si) insulated gate bipolar transistor (IGBT) and small-current silicon carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFET) is utilized in a three-phase T-type three-level grid inverter. The hybrid switch can optimize the cost of the system while achieving high efficiency. The relationship between efficiency improvement and cost of the hybrid switch is investigated. Several switching patterns, which can decrease the loss of the small-current SiC MOSFET for the hybrid switch, are studied. Different switching patterns for the hybrid switch of the grid inverter are compared based on the inverter efficiency. Finally, a 20 kW three-phase T-type three-level grid inverter prototype with the hybrid switch of large-current Si IGBT and small-current SiC MOSFET (1:2.4 SiC/Si current ratio) is built to verify the main results.

引用

页码：7558 / 7572

页数：15

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