Dynamics of ultrafast crystallization in As-deposited Ge2Sb2Te5 films

被引：9
作者：
Wang, QF
Shi, LP
Huang, SM
Miao, XS
Wong, KP
Chong, TC
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Data Storage Inst, Singapore 117608, Singapore
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 7B期
关键词：
femtosecond laser pulse; nonthermal phase change; ultrafast crystallization; Ge2Sb2Te5; films; reflective intensity;
D O I：
10.1143/JJAP.43.5006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Femtosecond laser-induced ultrafast crystallization in 80nm as-deposited Ge Sb2Te5 films has been investigated by time-resolved microscopy. With an average fluence of approximately 10 mJ/cm(2), a transient nonequilibrium state of the excited material was formed within 2 ps. The results can be interpreted as an electronically induced nonthermal phase transition.
引用
收藏
页码：5006 / 5008
页数：3
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