Recent Progress in Lithium Niobate: Optical Damage, Defect Simulation, and On-Chip Devices

被引:222
作者
Kong, Yongfa [1 ,2 ,3 ,4 ]
Bo, Fang [2 ,3 ]
Wang, Weiwei [1 ]
Zheng, Dahuai [2 ,3 ]
Liu, Hongde [1 ]
Zhang, Guoquan [1 ,2 ,3 ]
Rupp, Romano [5 ,6 ]
Xu, Jingjun [1 ,2 ,3 ,4 ]
机构
[1] Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China
[2] Nankai Univ, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300071, Peoples R China
[3] Nankai Univ, TEDA Inst Appl Phys, Tianjin 300071, Peoples R China
[4] Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China
[5] Univ Vienna, Fac Phys, A-1090 Vienna, Austria
[6] J Stefan Inst, Jamova 39, SI-1000 Ljubljana, Slovakia
基金
中国国家自然科学基金;
关键词
defect simulation calculation; integrated photonics; lithium niobate; on-chip devices; optical damage resistance; THIN-FILM; WAVE-GUIDES; HOLOGRAPHIC STORAGE; HIGH-RESISTANCE; ULTRAVIOLET PHOTOREFRACTION; 2ND-HARMONIC GENERATION; MICRODISK RESONATORS; COMPUTER-SIMULATION; INTRINSIC DEFECTS; GRATING COUPLER;
D O I
10.1002/adma.201806452
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Lithium niobate (LN) is one of the most important synthetic crystals. In the past two decades, many breakthroughs have been made in material technology, theoretical understanding, and application of LN crystals. Recent progress in optical damage, defect simulation, and on-chip devices of LN are explored. Optical damage is one of the main obstacles for the practical usage of LN crystals. Recent results reveal that doping with ZrO2 not only leads to better optical damage resistance in the visible but also improves resistance in the ultraviolet region. It is still awkward to extract defect characteristics and their relationship with the physical properties of LN crystals directly from experimental investigations. Recent simulations provide detailed descriptions of intrinsic defect models, the site occupation of dopants and the variation of energy levels due to extrinsic defects. LN is considered to be one of the most promising platforms for integrated photonics. Benefiting from advances in smart-cut, direct wafer bonding and layer transfer techniques, great progress has been made in the past decade for LNs on insulators. Recent progress on on-chip LN micro-photonic devices and nonlinear optical effects, in particular photorefractive effects, are briefly reviewed.
引用
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页数:14
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