Second-Harmonic Generation in GaAs Photonic Crystal Cavities in (111)B and (001) Crystal Orientations

被引：36
|
作者：
Buckley, Sonia [1 ]
Radulaski, Marina [1 ]
Petykiewicz, Jan [1 ]
Lagoudakis, Konstantinos G. [1 ]
Kang, Ju-Hyung [2 ]
Brongersma, Mark [2 ,3 ]
Biermann, Klaus [3 ]
Vuckovic, Jelena [1 ]
机构：
[1] Stanford Univ, Spilker Ctr Engn & Appl Sci, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
ACS PHOTONICS | 2014年 / 1卷 / 06期
基金：
美国国家科学基金会; 瑞士国家科学基金会;
关键词：
nanophotonics; semiconductor microcavities; photonic crystals; nonlinear optics; HARMONIC-GENERATION; FREQUENCY-CONVERSION; SINGLE PHOTONS; SURFACE; OPTIMIZATION; NANOCAVITIES;
D O I：
10.1021/ph500054u
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We demonstrate second-harmonic generation in photonic crystal cavities in (001)- and (111)B-oriented GaAs. The fundamental resonance is at 1800 nm, leading to generated second harmonic below the GaAs band gap. Below-band-gap operation minimizes absorption of the second-harmonic and two-photon absorption of the pump. Photonic crystal cavities were fabricated in both orientations at various in-plane rotations of the GaAs substrate. The rotation dependence and far-field patterns of the second harmonic match simulation. We observe similar maximum efficiencies of 1.2%/W in (001)- and (111)B-oriented GaAs.
引用
收藏
页码：516 / 523
页数：8
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