Single crystal functional oxides on silicon

被引:189
作者
Bakaul, Saidur Rahman [1 ]
Serrao, Claudy Rayan [1 ,2 ]
Lee, Michelle [3 ]
Yeung, Chun Wing [1 ]
Sarker, Asis [1 ]
Hsu, Shang-Lin [4 ]
Yadav, Ajay Kumar [2 ]
Dedon, Liv [2 ]
You, Long [1 ]
Khan, Asif Islam [1 ]
Clarkson, James David [2 ]
Hu, Chenming [1 ]
Ramesh, Ramamoorthy [2 ,3 ,4 ]
Salahuddin, Sayeef [1 ,4 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
来源
NATURE COMMUNICATIONS | 2016年 / 7卷
关键词
NEGATIVE CAPACITANCE; THIN-FILMS; SI;
D O I
10.1038/ncomms10547
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon.
引用
收藏
页数:5
相关论文
共 31 条
  • [1] Interplay of Couplings between Antiferrodistortive, Ferroelectric, and Strain Degrees of Freedom in Monodomain PbTiO3/SrTiO3 Superlattices
    Aguado-Puente, Pablo
    Garcia-Fernandez, Pablo
    Junquera, Javier
    [J]. PHYSICAL REVIEW LETTERS, 2011, 107 (21)
  • [2] Alexe M., 2004, WAFER BONDING APPL T
  • [3] Giant Piezoelectricity on Si for Hyperactive MEMS
    Baek, S. H.
    Park, J.
    Kim, D. M.
    Aksyuk, V. A.
    Das, R. R.
    Bu, S. D.
    Felker, D. A.
    Lettieri, J.
    Vaithyanathan, V.
    Bharadwaja, S. S. N.
    Bassiri-Gharb, N.
    Chen, Y. B.
    Sun, H. P.
    Folkman, C. M.
    Jang, H. W.
    Kreft, D. J.
    Streiffer, S. K.
    Ramesh, R.
    Pan, X. Q.
    Trolier-McKinstry, S.
    Schlom, D. G.
    Rzchowski, M. S.
    Blick, R. H.
    Eom, C. B.
    [J]. SCIENCE, 2011, 334 (6058) : 958 - 961
  • [4] Stack gate PZT/Al2O3 one transistor ferroelectric memory
    Chin, A
    Yang, MY
    Sun, CL
    Chen, SY
    [J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (07) : 336 - 338
  • [5] Physics of thin-film ferroelectric oxides
    Dawber, M
    Rabe, KM
    Scott, JF
    [J]. REVIEWS OF MODERN PHYSICS, 2005, 77 (04) : 1083 - 1130
  • [6] Defay E., 2011, Ferroelectric dielectrics integrated on silicon
  • [7] Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode
    Dubourdieu, Catherine
    Bruley, John
    Arruda, Thomas M.
    Posadas, Agham
    Jordan-Sweet, Jean
    Frank, Martin M.
    Cartier, Eduard
    Frank, David J.
    Kalinin, Sergei V.
    Demkov, Alexander A.
    Narayanan, Vijay
    [J]. NATURE NANOTECHNOLOGY, 2013, 8 (10) : 748 - 754
  • [8] SINGLE-CRYSTAL EPITAXIAL THIN-FILMS OF THE ISOTROPIC METALLIC OXIDES SR1-XCAXRUO3 (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1)
    EOM, CB
    CAVA, RJ
    FLEMING, RM
    PHILLIPS, JM
    VANDOVER, RB
    MARSHALL, JH
    HSU, JWP
    KRAJEWSKI, JJ
    PECK, WF
    [J]. SCIENCE, 1992, 258 (5089) : 1766 - 1769
  • [9] Room-temperature ferroelectricity in strained SrTiO3
    Haeni, JH
    Irvin, P
    Chang, W
    Uecker, R
    Reiche, P
    Li, YL
    Choudhury, S
    Tian, W
    Hawley, ME
    Craigo, B
    Tagantsev, AK
    Pan, XQ
    Streiffer, SK
    Chen, LQ
    Kirchoefer, SW
    Levy, J
    Schlom, DG
    [J]. NATURE, 2004, 430 (7001) : 758 - 761
  • [10] Deterministic switching of ferromagnetism at room temperature using an electric field
    Heron, J. T.
    Bosse, J. L.
    He, Q.
    Gao, Y.
    Trassin, M.
    Ye, L.
    Clarkson, J. D.
    Wang, C.
    Liu, Jian
    Salahuddin, S.
    Ralph, D. C.
    Schlom, D. G.
    Iniguez, J.
    Huey, B. D.
    Ramesh, R.
    [J]. NATURE, 2014, 516 (7531) : 370 - +