Atomic and electronic structure of acetic acid on Ge(100)

被引:21
作者
Kim, Do Hwan
Hwang, Eunkyung
Hong, Suklyun [1 ]
Kim, Sehun
机构
[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea
[2] Sejong Univ, Inst Fundamental Phys, Seoul 143747, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea
[4] Korea Adv Inst Sci & Technol, Sch Mol Sci, Taejon 305701, South Korea
关键词
density-functional theory calculations; germanium; acetic acid; chemisorption; Ge(100); atomic and electronic structure;
D O I
10.1016/j.susc.2006.02.054
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have performed ab initio density-functional theory (DFT) calculations in order to investigate the atomic and electronic structure of acetic acid adsorbed on Ge(100) surface. Due to its acidity, acetic acid dissociates and the resulting electron-rich acetate group reacts with the electron-deficient down-Ge atom through nucleophilic addition (mono-dentate structure). Further reaction between the electron-rich up-Ge atom and the carboxylic oxygen atom results in bidentate bridged structures, which are energetically most favorable among the tested geometries. The existence of the dissociated H atom on the neighboring Ge atoms and the buckling of Ge dimers are found to affect the feasibility of the formation of bidentate structures. We obtain the simulated STM images from the optimized adsorption geometries for most favorable structures. Theoretical STM images for on-top bidentate structures show characteristic features having on-top protrusions, while those for end-bridged structures show protrusions localized at one side of a dimer row. (c) 2006 Elsevier B.V. All rights reserved.
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页码:3629 / 3632
页数:4
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