Scanning capacitance microscopy of TGS - TGS plus Cr ferroelectric crystals

被引：3

作者：

Gainutdinov, R. V. ^{[1
]}

Belugina, N. V. ^{[1
]}

Lashkova, A. K. ^{[1
]}

Shut, V. N. ^{[2
]}

Kashevich, I. F. ^{[3
]}

Mozzharov, S. E. ^{[2
]}

Tolstikhina, A. L. ^{[1
]}

机构：

[1] Russian Acad Sci, Fed Sci Res Ctr Crystallog & Photon, Shubnikov Inst Crystallog, Moscow, Russia

[2] Natl Acad Sci Belarus, Inst Tech Acoust, Vitebsk, BELARUS

[3] Vitebsk State Univ, Dept Math & IT, Vitebsk, BELARUS

来源：

FERROELECTRICS | 2019年 / 541卷 / 01期

关键词：

TGS; scanning capacitance microscopy; compositional mapping; domain structure; TRIGLYCINE SULFATE CRYSTALS; FORCE MICROSCOPY; RESOLUTION;

D O I：

10.1080/00150193.2019.1574640

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The question of the applicability of the scanning capacitive microscopy method for the composite mapping of ferroelectric crystals with the growth periodic structure TGS - TGS + Cr is considered. Contrast images of nominally pure stripes and impurity ones with concentration of Cr+3 similar to 0.08 wt% were obtained. Volt-ampere characteristics were measured, which revealed current increase in the impurity stripes in 1.5-3 times. It was shown that capacitive contrast was formed in the stripes with a gradient of impurity concentration and at the domain boundaries.

引用

页码：39 / 46

页数：8

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