Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

被引：42

作者：

Chen, J. -R. ^{[1
,2
]}

Ling, S. -C. ^{[1
,2
]}

Huang, H. -M. ^{[1
,2
]}

Su, P. -Y. ^{[1
,2
]}

Ko, T. -S. ^{[1
,2
]}

Lu, T. -C. ^{[1
,2
]}

Kuo, H. -C. ^{[1
,2
]}

Kuo, Y. -K. ^{[3
]}

Wang, S. -C. ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2009年 / 95卷 / 01期

关键词：

STRAINED WURTZITE GAN; BAND PARAMETERS; SEMICONDUCTORS; HETEROSTRUCTURES; WAVELENGTH; RATIO; GAIN; PERFORMANCE; TECHNOLOGY; FIELDS;

D O I：

10.1007/s00340-008-3331-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron-hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10-15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.

引用

页码：145 / 153

页数：9

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