Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties

Thin Fe films have been grown on Ge(001) substrates using molecular beam epitaxy, and the interface structure, electronic and magnetic properties have been studied. Cross-sectional transmission electron microscopy indicated that the substrates are uniformly covered by the Fe films, and x-ray photoemission spectroscopy did not show any evidence for reaction or intermixing at the interface. The growth did not appear to be affected by deposition of an As monolayer prior to Fe growth. Saturation magnetization measured for a 3.7 nm thick Fe layer on Ge(001) was close to the value for bulk Fe. The angular dependence of magnetization shows fourfold symmetry, typical of bcc Fe. (C) 2002 American Vacuum Society.