Generation and recombination in two-dimensional bipolar transistors

被引：4
作者：
Gharekhanlou, Behnaz [1 ]
Khorasani, Sina [1 ]
机构：
[1] Sharif Univ Technol, Sch Elect Engn, Tehran, Iran
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 115卷 / 03期
关键词：
MoS2; Recombination Process; Depletion Layer; Depletion Region; Bipolar Junction Transistor;
D O I：
10.1007/s00339-014-8402-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the effects of recombination and generation process on the operation of bipolar junction transistor based on two-dimensional materials, and in particular, graphone. Here, we use Shockley-Read-Hall model to study these process. First, we investigate the current-voltage characteristics of a graphone p-n junction considering generation and recombination process. Then, we calculate the estimated changes in current gain, cutoff frequency, and output characteristics of a graphone bipolar junction transistor designed in a recent study.
引用
收藏
页码：737 / 740
页数：4
相关论文
共 50 条
  • [21] Nanoforming of transferred metal contacts for enhanced two-dimensional field effect transistors
    Xu, Shuoheng
    Huang, Zheng
    Guan, Jie
    Hu, Yaowu
    NANO RESEARCH, 2024, 17 (04) : 3210 - 3216
  • [22] Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two-Dimensional Atomic Crystals
    Liu, Liwei
    Xu, Ningsheng
    Zhang, Yu
    Zhao, Peng
    Chen, Huanjun
    Deng, Shaozhi
    ADVANCED FUNCTIONAL MATERIALS, 2019, 29 (17)
  • [23] Field-effect transistors based on two-dimensional materials for logic applications
    Wang Xin-Ran
    Shi Yi
    Zhang Rong
    CHINESE PHYSICS B, 2013, 22 (09)
  • [24] Temperature-dependent photoconductivity in two-dimensional MoS2 transistors
    Di Bartolomeo, A.
    Kumar, A.
    Durante, O.
    Sessa, A.
    Faella, E.
    Viscardi, L.
    Intonti, K.
    Giubileo, F.
    Martucciello, N.
    Romano, P.
    Sleziona, S.
    Schleberger, M.
    MATERIALS TODAY NANO, 2023, 24
  • [25] Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors
    Illarionov, Yury Yu
    Banshchikov, Alexander G.
    Polyushkin, Dmitry K.
    Wachter, Stefan
    Knobloch, Theresia
    Thesberg, Mischa
    Mennel, Lukas
    Paur, Matthias
    Stoeger-Pollach, Michael
    Steiger-Thirsfeld, Andreas
    Vexler, Mikhail, I
    Walt, Michael
    Sokolov, Nikolai S.
    Mueller, Thomas
    Grasser, Tibor
    NATURE ELECTRONICS, 2019, 2 (06) : 230 - 235
  • [26] Field-effect transistors based on two-dimensional materials for logic applications
    王欣然
    施毅
    张荣
    Chinese Physics B, 2013, 22 (09) : 151 - 165
  • [27] Two-dimensional materials for next-generation computing technologies
    Liu, Chunsen
    Chen, Huawei
    Wang, Shuiyuan
    Liu, Qi
    Jiang, Yu-Gang
    Zhang, David Wei
    Liu, Ming
    Zhou, Peng
    NATURE NANOTECHNOLOGY, 2020, 15 (07) : 545 - 557
  • [28] Field-Effect Transistors Built from All Two-Dimensional Material Components
    Roy, Tania
    Tosun, Mahmut
    Kang, Jeong Seuk
    Sachid, Angada B.
    Desai, Sujay B.
    Hettick, Mark
    Hu, Chenming C.
    Javey, Ali
    ACS NANO, 2014, 8 (06) : 6259 - 6264
  • [29] Dopant-mediated carrier tunneling in short-channel two-dimensional transistors
    Lu, Yue
    Li, Chenyu
    Yang, Shenbo
    Yuan, Mingxuan
    Qiao, Shuo
    Ji, Qingqing
    MATERIALS CHEMISTRY FRONTIERS, 2024, 8 (20) : 3300 - 3307
  • [30] Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors
    Puebla, Sergio
    Pucher, Thomas
    Rouco, Victor
    Sanchez-Santolino, Gabriel
    Xie, Yong
    Zamora, Victor
    Cuellar, Fabian A.
    Mompean, Federico J.
    Leon, Carlos
    Island, Joshua O.
    Garcia-Hernandez, Mar
    Santamaria, Jacobo
    Munuera, Carmen
    Castellanos-Gomez, Andres
    NANO LETTERS, 2022, 22 (18) : 7457 - 7466
12345