Initial stages of adsorption in the Cu/Si(111) system

被引：7
作者：
Shukrinov, P
Savchenkov, A
Mutombo, P
Cháb, V
Slezák, J
机构：
[1] Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague 6, Czech Republic
[2] Czech Design Ctr SRO, Semicond Characterizat Engineer Design Syst Techn, Roznov PR 75661, Czech Republic
来源：
SURFACE SCIENCE | 2002年 / 506卷 / 03期
关键词：
copper; scanning tunneling microscopy; surface chemical reaction; surface segregation; silicon; metal-semiconductor interfaces;
D O I：
10.1016/S0039-6028(02)01164-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The adsorption of Cu atoms on a Si(1 1 1)-7 x 7 surface was studied using scanning tunnelling microscopy. Two different kinds of clusters were found at room temperature and we associate them with copper atoms embedded in subsurface layers. Short annealing at similar to550 degreesC stimulates a reaction, leading to the substitution of corner Si adatoms in the 7 x 7 unit cell. This configuration is stable with respect to continuing thermal processing. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：223 / 227
页数：5
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