Multifunctional Few-Layer MoS2 for Photodetection and Surface-Enhanced Raman Spectroscopy Application with Ultrasensitive and Repeatable Detectability

被引:58
作者
Majee, Bishnu Pada [1 ]
Mishra, Shanu [1 ]
Pandey, Rajiv K. [1 ]
Prakash, Rajiv [1 ]
Mishra, Ashish Kumar [1 ]
机构
[1] Banaras Hindu Univ, Indian Inst Technol, Sch Mat Sci & Technol, Varanasi 221005, Uttar Pradesh, India
关键词
MONOLAYER MOS2; VISIBLE-LIGHT; HIGH-DETECTIVITY; HETEROJUNCTION; PHOTOLUMINESCENCE; SCATTERING; PHOTORESPONSE; DEGRADATION; PERFORMANCE; NANOSHEETS;
D O I
10.1021/acs.jpcc.9b04279
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molybdenum disulfide (MoS2) with unique electronic and physical properties has attracted great interest in the field of next-generation optoelectronic and photonic devices for societal benefits. In view of considering the great challenge in scaling the monolayer MoS2, the current focus is on improving the performance of few-layer MoS2-based optoelectronic and photonic devices. Here, we report multifunctional large area-grown few-layer MoS2 for the photoresponse and detection of organic pollutants. The few-layer MoS2 (thickness of around 4 nm) has been successfully synthesized over highly doped p-type Si via the chemical vapor deposition technique, and their optical properties have been studied using Raman and photoluminescence spectroscopy. Here, we report the photoresponse of a pristine few-layer MoS2/Si heterojunction under low power white light illumination (0.15 mW cm(-2)) with 0.1413 A photoresponsivity at 2 V. This photoresponsivity is the best to our knowledge under white light illumination condition concerning light intensity. Further, few-layer MoS2 over Si has been successfully demonstrated as a surface-enhanced Raman spectroscopy (SERS) substrate for the ultrasensitive detection of Rhodamine 6G (R6G) at nanomolar concentration, which is the highest detection limit for R6G using pristine MoS2 to the best of our knowledge. Additionally, we also examined the treatment of adsorbed R6G over few-layer MoS2 in the presence of water under visible light illumination for reusability of the SERS substrate with repeated detectability.
引用
收藏
页码:18071 / 18078
页数:8
相关论文
共 55 条
[11]   High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors [J].
Dhyani, Veerendra ;
Das, Samaresh .
SCIENTIFIC REPORTS, 2017, 7
[12]   High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector [J].
Esmaeili-Rad, Mohammad R. ;
Salahuddin, Sayeef .
SCIENTIFIC REPORTS, 2013, 3
[13]   Fast and Efficient Preparation of Exfoliated 2H MoS2 Nanosheets by Sonication-Assisted Lithium Intercalation and Infrared Laser-Induced 1T to 2H Phase Reversion [J].
Fan, Xiaobin ;
Xu, Pengtao ;
Zhou, Dekai ;
Sun, Yifan ;
Li, Yuguang C. ;
Nguyen, Minh An T. ;
Terrones, Mauricio ;
Mallouk, Thomas E. .
NANO LETTERS, 2015, 15 (09) :5956-5960
[14]   MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].
FIVAZ, R ;
MOOSER, E .
PHYSICAL REVIEW, 1967, 163 (03) :743-&
[15]   Optical-absorption spectra of inorganic fullerenelike MS2 (M = Mo, W) [J].
Frey, GL ;
Elani, S ;
Homyonfer, M ;
Feldman, Y ;
Tenne, R .
PHYSICAL REVIEW B, 1998, 57 (11) :6666-6671
[16]  
Furchi MM, 2014, NANO LETT, V14, P6165, DOI [10.1021/n1502339q, 10.1021/nl502339q]
[17]  
Jariwala D, 2017, NAT MATER, V16, P170, DOI [10.1038/nmat4703, 10.1038/NMAT4703]
[18]   High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals [J].
Kim, Sunkook ;
Konar, Aniruddha ;
Hwang, Wan-Sik ;
Lee, Jong Hak ;
Lee, Jiyoul ;
Yang, Jaehyun ;
Jung, Changhoon ;
Kim, Hyoungsub ;
Yoo, Ji-Beom ;
Choi, Jae-Young ;
Jin, Yong Wan ;
Lee, Sang Yoon ;
Jena, Debdeep ;
Choi, Woong ;
Kim, Kinam .
NATURE COMMUNICATIONS, 2012, 3
[19]   Low-temperature photocarrier dynamics in monolayer MoS2 [J].
Korn, T. ;
Heydrich, S. ;
Hirmer, M. ;
Schmutzler, J. ;
Schueller, C. .
APPLIED PHYSICS LETTERS, 2011, 99 (10)
[20]   Anomalous Lattice Vibrations of Single- and Few-Layer MoS2 [J].
Lee, Changgu ;
Yan, Hugen ;
Brus, Louis E. ;
Heinz, Tony F. ;
Hone, James ;
Ryu, Sunmin .
ACS NANO, 2010, 4 (05) :2695-2700