A level set simulation for ordering of quantum dots via cleaved-edge overgrowth

被引：4

作者：

Niu, X. B. ^{[1
,2
]}

Uccelli, E. ^{[3
,4
]}

Fontcuberta i Morral, A. ^{[3
]}

Ratsch, C. ^{[5
,6
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[2] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

[3] Ecole Polytech Fed Lausanne, Inst Mat, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

[4] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[5] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA

[6] Univ Calif Los Angeles, Inst Pure & Appl Math, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 02期

关键词：

aluminium compounds; diffusion; gallium arsenide; III-V semiconductors; indium compounds; potential energy surfaces; semiconductor quantum dots; GROWTH;

D O I：

10.1063/1.3182730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cleaved-edge overgrowth (CEO) is a promising technique to obtain ordered arrays of quantum dots, where the size and position of the dots can be controlled very well. We present level set simulations for CEO. Our simulations illustrate how the quality of the CEO technique depends on the potential energy surface (PES) for adatom diffusion, and thus suggest how variations of the PES can potentially improve the uniformity of quantum dot arrays.

引用

页数：3