A 0.1-3 GHz, 90nm CMOS Wideband LNA Employing Positive Negative Feedback for Gain, NF and Linearity Improvement

被引：0
作者：
Pandey, Anurag [1 ]
Pusalkar, Malhar [1 ]
Dwaramwar, Pravin [1 ]
机构：
[1] RCOEM, Dept Elect Engn, Nagpur 13, Maharashtra, India
来源：
PROCEEDINGS OF 2016 INTERNATIONAL CONFERENCE ON ADVANCED COMMUNICATION CONTROL AND COMPUTING TECHNOLOGIES (ICACCCT) | 2016年
关键词：
CMOS; common gate (CG); multiband; linearity; positive-negative feedback; transconductance (g(m)); IIP3;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A wideband LNA from 0.1 - 3 GHz, is designed in 90nm CMOS technology by applying positive-negative feedback to the conventional differential CG-LNA. The gain increases with simultaneous reduction in noise figure as a result of increase in overall effective transconductance due to application of both positive and negative feedback. Also, the positive-negative feedback improves linearity by cancellation of third harmonic. The design uses multi-fingered MOS transistors resulting in lowering of NF. The wideband input and output matching networks used provide better matching over the wideband. The LNA exhibits a voltage gain of 17 dB as its maximum value with flatness over the band, minimum noise figure of 2.73 dB. S11, S22 < - 10 dB. The LNA shows an IIP3 of -0.867 dBm (at 1.575 GHz) while the core consumes 2.56 mA current from a 2V supply.
引用
收藏
页码：147 / 152
页数：6
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