Effect of hydrogenation on the characteristics of GaAs Schottky diodes

被引：0

作者：

Mohan, S ^{[1
]}

Tyagi, R ^{[1
]}

Bal, M ^{[1
]}

Haldar, T ^{[1
]}

Singh, M ^{[1
]}

Singh, PV ^{[1
]}

Agarwal, SK ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The n- GaAs epitaxial layers over n+ GaAs substrates were subjected to hydrogenation by plasma as well as by chemical technique (catalytic hydrogenation). The reduction in free carrier concentration after hydrogenation has been observed using ECV profiler. The studies towards change in ideality factor (eta) and reverse saturation current (I-o) of the diode have been determined by fabricating Au/Ni/GaAs Schottky diodes on hydrogenated and unhydrogenated n-GaAs layers.

引用

页码：1133 / 1135

页数：3

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