Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy

被引：16

作者：

Anyebe, E. A. ^{[1
]}

Zhuang, Q. ^{[1
]}

Sanchez, A. M. ^{[2
]}

Lawson, S. ^{[1
]}

Robson, A. J. ^{[1
]}

Ponomarenko, L. ^{[3
]}

Zhukov, A. ^{[3
]}

Kolosov, O. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[3] Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

self-catalysed growth; InAs; nanowires; bare silicon; droplet epitaxy;

D O I：

10.1002/pssr.201409106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nanowires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：658 / 662

页数：5

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