Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode

被引：1
作者：
Kim, DS
Lee, S
Kim, JH
Woo, DH
Kim, SH
Han, SK
机构：
[1] Korea Inst Sci & Technol, Photon Res Ctr, Seoul 130650, South Korea
[2] Yonsei Univ, Dept Elect & Elect Engn, Opt Commun Lab, Seodaemoon Ku, Seoul 120749, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 5B期
关键词：
tunable laser; semiconductor optical amplifier; lateral coupling; coupled mode theory; transfer matrix method; side-mode suppression;
D O I：
10.1143/JJAP.41.L574
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel tunable laser consisting of a laterally coupled semiconductor optical amplifier and a semiconductor laser is proposed. This structure exhibits a high degree of frequency selectivity, wide tunability with electrically controlled wavelength, and relatively high side-mode suppression achieved by the additional short electrode in the semiconductor laser. The proposed structure is simulated using the coupled mode theory and the modified transfer matrix method (TMM). This Simulation yields a tuning range of up to 48 nm with a side-mode suppression ratio of approximately 35 dB.
引用
收藏
页码：L574 / L576
页数：3
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