B. X-ray diffraction method;
C. Dielectric properties;
C;
Impedance;
C. Electrical conductivity;
ELECTRICAL-PROPERTIES;
MODULUS SPECTROSCOPY;
COMPLEX IMPEDANCE;
ELECTROCERAMICS;
BAFE0.5NB0.5O3;
PERMITTIVITY;
SR;
D O I:
10.1016/j.ceramint.2013.12.122
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
A lead free polycrystalline material Sr(Bi0.5Nb0.5)O-3 was prepared using a high-temperature solid-state reaction technique. Preliminary X-rays diffraction studies exhibit the formation of a single-phase compound in the orthorhombic crystal system. The study of microstructure of gold-coated pellet by scanning electron microscopy (SEM) shows well-defined and homogeneous distribution of grains on the surface of the sample. Detailed studies of dielectric parameters (i.e., epsilon(r) and tan delta) of the compound as a function of temperature at selected. frequencies reveal that the values of these parameters are almost independent of temperature. Studies of impedance and related parameters exhibit that these electrical properties of the material are strongly dependent on temperature, and bear a good correlation with the microstructure of the material. The decrease in value of bulk resistance on increasing temperature suggests the existence of negative temperature co-efficient of resistance (NTCR) in the material. Studies of electric modulus show the presence of hopping conduction mechanism in the material with non-exponential-type of relaxation. The nature of variation of de conductivity with temperature confirms the Arrhenius- and NTCR- types of behaviors of the material. The ac conductivity spectrum provides a typical-signature of an ionic conducting system, and is found to obey Jonscher's universal power law. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Selvamani, Rachna
Singh, Gurvinderjit
论文数: 0引用数: 0
h-index: 0
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Singh, Gurvinderjit
Sathe, Vasant
论文数: 0引用数: 0
h-index: 0
机构:
UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Sathe, Vasant
Tiwari, V. S.
论文数: 0引用数: 0
h-index: 0
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Tiwari, V. S.
Gupta, P. K.
论文数: 0引用数: 0
h-index: 0
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Selvamani, Rachna
Singh, Gurvinderjit
论文数: 0引用数: 0
h-index: 0
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Singh, Gurvinderjit
Sathe, Vasant
论文数: 0引用数: 0
h-index: 0
机构:
UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Sathe, Vasant
Tiwari, V. S.
论文数: 0引用数: 0
h-index: 0
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India
Tiwari, V. S.
Gupta, P. K.
论文数: 0引用数: 0
h-index: 0
机构:
Raja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, IndiaRaja Ramanna Ctr Adv Technol, Laser Mat Dev & Devices Div, Indore 452013, India