Cyclic Voltammetry Analysis of Co-Electrodeposition Mechanism of rGO-Sb2Se3 Thin Films Photocathode

被引：3

作者：

Wang, Jun ^{[1
]}

Chen, Jianyu ^{[2
]}

Jiang, Liangxing ^{[1
]}

Liu, Fangyang ^{[1
]}

Jia, Ming ^{[1
]}

Lai, Yanqing ^{[1
]}

Li, Jie ^{[1
]}

机构：

[1] Cent S Univ, Sch Met & Environm, Changsha, Hunan, Peoples R China

[2] Yangtze Memory Technol Co Ltd, Wuhan, Hubei, Peoples R China

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2019年 / 166卷 / 10期

基金：

中国博士后科学基金; 中国国家自然科学基金; 湖南省自然科学基金;

关键词：

GRAPHENE OXIDE; SB2SE3; NANOWIRES; LIGHT; PERFORMANCE; GROWTH; ANTIMONY; LIQUID;

D O I：

10.1149/2.0921910jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

rGO-Sb2Se3 thin films were deposited on ITO electrode and the complex electrochemical processes within ternary Sb-Se-GO precursor solution had been researched by cyclic voltammetry. The addition of GO can promote the deposition of Sb and Se simultaneously. In addition, the co-electrodeposition process of Sb2Se3 which controlled by diffusion step was irreversible and was achieved by the mutual inducement of preferentially precipitated Se and subsequently deposited Sb. The influence of deposition potential was studied, for which -0.75 V similar to-0.9 V was selected as the optimal condition to obtain the ideal p-type rGO-Sb2Se3 thin films. (c) 2019 The Electrochemical Society.

引用

页码：D421 / D426

页数：6

共 46 条

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