Spontaneous emission factor in planar micro-cavity lasers with distributed mirrors

被引：0
|
作者：
Zhao, HD [1 ]
Cao, M [1 ]
Kuang, ZL [1 ]
Zhu, XG [1 ]
Zhang, YM [1 ]
机构：
[1] Hebei Univ Technol, Coll Informat, Tianjin 300130, Peoples R China
来源：
SEMICONDUCTOR LASERS AND APPLICATIONS | 2002年 / 4913卷
关键词：
spontaneous emission factor; dipole; quantum well; plannar micro-cavity;
D O I：
10.1117/12.482223
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method of the analysis of spontaneous emission factor have been showed for a planar micro-cavity laser with distributed mirrors based on spectra and half angle at far field full-width half maximum of the lasing mode. After the spontaneous emission radiation patters for a dipole in the micro-cavity is calculated, a considerable value of spontaneous emission factor 0.1 is presented. Then the band filling in the semiconductor and the vacuum field in the micro-cavity are studied together, the spontaneous emission spectrum for a quantum well micro-cavity is described. The maximum scaling of spontaneous emission factor in the practical micro-cavity laser is 3.2*10(-3) in the quantum well micro-cavity The difference spontaneous emission between a dipole micro-cavity with a quantum well micro-cavity is discussed.
引用
收藏
页码：161 / 165
页数：5
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