Hall effect in the normal state of high-Tc cuprates

被引:1
作者
Bok, J [1 ]
Bouvier, J [1 ]
机构
[1] ESPCI, Solid State Phys Lab, F-75231 Paris 05, France
来源
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2004年 / 408卷
关键词
High-T-c; cuprates; Hall effect; normal state;
D O I
10.1016/j.physc.2004.02.136
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a model for explaining the results of the Hall effect measurements of high-T-c cuprates in the normal state, in various materials. They all show common features: a decrease of the Hall coefficient RH with temperature and a universal law, when plotting R-H(T)/R-H (T-0) versus T/T-0 where T-0 is defined from experimental results. This behaviour is explained by using the well known electronic band structure of a CuO2 plane, showing saddles points at the energies E-S in the directions [0, +/-pi] and [+/-pi, 0]. This is well confirmed by photoemission experiments. We remark that for the energies E > E-S the carrier orbits are hole-like and for E < E-S they are electron-like, giving opposite contributions to R-H. We are able to fit all experimental results for all doping, and to fit the universal curve. For us k(B) To is Simply E-F - E-S, where EF is the Fermi level varying with the doping. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:242 / 243
页数:2
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