Crystal Structure of BaMg2Si2O7 was determined and refined by a combined powder X-ray and neutron Rietveld method (monoclinic, C2/c, no. 15, Z = 8, a = 7.24553(8) angstrom, b = 12.71376(14) angstrom, c = 13.74813(15) angstrom, beta = 90.2107(8)degrees, V = 1266.44(2) angstrom(3); R-p/R-wp = 3.38%/4.77%). The structure contains a single crystallographic type of Ba atom coordinated to eight O atoms with C-1 (1) site symmetry. Under 325-nm excitation Ba0.98Eu0.02Mg2Si2O7 exhibits an asymmetric emission band around 402 nm. The asymmetric shape of the emission band is likely associated with a small electron-phonon coupling in BaMg2Si2O7 The integrated intensity of the emission band was observed to remain constant over the temperature range 4.2-300 K. (C) 2009 Elsevier Inc. All rights reserved.
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Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R ChinaUniv Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China
Liu, Xiaolang
Song, Zhen
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Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R ChinaUniv Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China
Song, Zhen
Wang, Shuxin
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Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R ChinaUniv Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China
Wang, Shuxin
Liu, Quanlin
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Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R ChinaUniv Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China
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Anhui Inst Architecture & Ind, Res Ctr Funct Mat, Hefei 230022, Peoples R ChinaAnhui Inst Architecture & Ind, Res Ctr Funct Mat, Hefei 230022, Peoples R China
Xie Wen-Jie
Xu Xin
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Univ Sci & Technol China, Lab Mat Energy Convers, Hefei 230026, Peoples R ChinaAnhui Inst Architecture & Ind, Res Ctr Funct Mat, Hefei 230022, Peoples R China
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Samsung Elect Co, LED Div, Suwon 443742, Kyunggi, South KoreaSunchon Natl Univ, Dept Printed Elect Engn, World Class Univ Program, Sunchon 540742, Chonnam, South Korea
Yoon, Chulsoo
Sohn, Kee-Sun
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Sunchon Natl Univ, Dept Printed Elect Engn, World Class Univ Program, Sunchon 540742, Chonnam, South KoreaSunchon Natl Univ, Dept Printed Elect Engn, World Class Univ Program, Sunchon 540742, Chonnam, South Korea