Spintronics: exchange switching of ferromagnetic metallic junctions at a low current density

被引：21

作者：

Gulyaev, Yu V. ^{[1
]}

Zilberman, P. E. ^{[2
]}

Panas, A. I. ^{[2
]}

Epshtein, E. M. ^{[2
]}

机构：

[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Moscow 125009, Russia

[2] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Fryazino 141190, Moscow Region, Russia

来源：

PHYSICS-USPEKHI | 2009年 / 52卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

SPIN-INJECTION; MAGNETORESISTANCE; POLARIZATION; TRANSPORT;

D O I：

10.3367/UFNe.0179.200904b.0359

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A review is given on the exchange switching of ferro-magnetic metallic junctions under the effect of a low threshold current. A dramatic (orders of magnitude) threshold current reduction is achieved under conditions that include the dominance of the current-driven nonequilibrium spin injection, the optimum relation between spin resistances of the layers, and the application of an external magnetic field near the reorientation phase transition point.

引用

页码：335 / 343

页数：9

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