Spintronics: exchange switching of ferromagnetic metallic junctions at a low current density

被引：21
作者：
Gulyaev, Yu V. [1 ]
Zilberman, P. E. [2 ]
Panas, A. I. [2 ]
Epshtein, E. M. [2 ]
机构：
[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Moscow 125009, Russia
[2] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Fryazino 141190, Moscow Region, Russia
来源：
PHYSICS-USPEKHI | 2009年 / 52卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
SPIN-INJECTION; MAGNETORESISTANCE; POLARIZATION; TRANSPORT;
D O I：
10.3367/UFNe.0179.200904b.0359
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A review is given on the exchange switching of ferro-magnetic metallic junctions under the effect of a low threshold current. A dramatic (orders of magnitude) threshold current reduction is achieved under conditions that include the dominance of the current-driven nonequilibrium spin injection, the optimum relation between spin resistances of the layers, and the application of an external magnetic field near the reorientation phase transition point.
引用
收藏
页码：335 / 343
页数：9
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